1n4151w-v document number 85721 rev. 1.3, 17-aug-10 vishay semiconductors www.vishay.com 1 17431 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diode features ? silicon epitaxial planar diode ? fast switching diode ? this diode is also available in other case styles including the do-35 case with the type designation 1n4151, and the minimelf case with the type designation ll4151. ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature. thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature. part ordering code marking remarks 1n4151w-v 1n4151w-v-gs18 or 1n4151w-v-gs08 a5 tape and reel parameter test condition symbol value unit reverse voltage v r 50 v peak reverse voltage v rm 75 v average rectified current half wave rectification with resistive load f 50 hz i f(av) 150 1) ma surge current t < 1 s and t j = 25 c i fsm 500 ma power dissipation p tot 410 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 450 1) k/w junction temperature t j 150 c storage temperature range t stg - 65 to 150 c
www.vishay.com 2 document number 85721 rev. 1.3, 17-aug-10 1n4151w-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c unless otherwise specified parameter test condition symbol min. ty p. max. unit forward voltage i f = 50 ma v f 1.0 v leakage current v r = 50 v i r 50 na v r = 20 v, t j = 150 c i r 50 a reverse breakdown voltage i r = 5 a (pulsed) v (br) 75 v diode capacitance v f = v r = 0 v c d 2pf reverse recovery time i f = 10 ma to i r = 10 ma to i r = 1 ma t rr 4ns i f = 10 ma to i r = 1 ma, v r = 6 v, r l = 100 t rr 2ns figure 1. forward current vs. forward voltage figure 2. dynamic forward re sistance vs. forward current 1 8 742 1000 100 10 1 0.1 0.01 i- for w ard c u rrent (ma) f 0 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 2 0.2 v - for w ard v oltage ( v ) =100 c t j 25 c f 1 8 662 1 10 100 1000 10000 r - dynamic for w ard resistance f () 110 0.1 0.01 100 i f - for w ard c u rrent (ma) =25 c t j f=1khz figure 3. admissible power dissi pation vs. ambient temperature figure 4. relative capacitance vs. reverse voltage 200 1 8 743 t am b - am b ient temperat u re (c) 1000 8 00 600 400 200 20 40 60 8 0 100 120 140 1601 8 0 p - admissi b le po w er dissipation (m w ) tot 0 0 1 8 664 246 8 0 1.1 1.0 0.9 0. 8 0.7 10 c d ( v r )/c d (0 v ) - relati v e capacitance (pf) v r - re v erse v oltage ( v ) =25 c t j f=1mhz
1n4151w-v document number 85721 rev. 1.3, 17-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com figure 5. leakage current vs. junction temperature 1 1 8 744 10 100 1000 10000 020 4060 8 0 100 120 140 160 1 8 0 200 i - leakage c u rrent (na) r t j - j u nction temperat u re (c) =50 v v r figure 6. admissible repetitive peak forward current vs. pulse duration /t t = 1/f =t pp i frm t p t t i =0 0.1 0.2 0.5 10 10 1 -1 100 10 1 -5 10 10 -4 10 -3 10 -2 1 8 709 i - admissi b le repetiti v e frm peak for w ard c u rrent (a) t p -p u lse length (s)
www.vishay.com 4 document number 85721 rev. 1.3, 17-aug-10 1n4151w-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432
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